IRF7103PBF MOSFET SMD

Description IRF7103PBF MOSFET SMD IRF7103PBF MOSFET SMD  is a dual N-channel MOSFET designed for vapour phase Infrared or wave soldering techniques. It has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Advanced process technology Ultra low ON-resistance Surface-mount device Dynamic dV/dt rating Fast switching performance RF7103 MOSFET. Datasheet  Type Designator: IRF7103 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 2 W Maximum Drain-Source Voltage |Vds|: 50 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V Maximum Drain Current |Id|: 3 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 12 nC Rise Time (tr): 8 nS Drain-Source Capacitance (Cd): 140 pF Maximum Drain-Source On-State Resistance (Rds): 0.13 Ohm