D5N50 N-CH SMD Mosfet

Description D5N50 N-CH SMD Mosfet D5N50 N-CH SMD Mosfet Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary High cell density, DMOS technology. High density process has been designed to minimize on-state resistance. Provide rugged and reliable performance and fast switching. MOSFET Transistors, ON Semi. ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, Which it is incorporated into multiple industry-standard and thermally-enhanced packages. ON Semi MOSFETs provide superior design reliability from reduced. Voltage spikes and overshoot, to lower junction capacitance and reverse. Recovery charge, to elimination of additional external components to keep systems up and running longer. Specification Attribute Value Channel Type N Maximum Continuous Drain Current 14 A Maximum Drain Source Voltage 50 V Package Type DPAK (TO-252) Mounting Type Surface Mount Pin Count 3 Maximum Drain Source Resistance 100 mΩ Channel Mode Enhancement Minimum Gate Threshold Voltage 1V Maximum Power Dissipation 48 W Transistor Configuration Single Maximum Gate Source Voltage -10 V, 10 V Number of Elements per Chip 1 Transistor Material Si Width 6.22mm Minimum Operating Temperature -55 °C Typical Gate Charge @ Vgs 25 nC @ 5 V, 40 nC @ 10 V Height 2.39mm Maximum Operating Temperature 175 °C Length 6.73mm