FGW75N60HD 600V 75A N-Channel IGBT Transistor TO-247

The Fuji Electric FGW75N60HD 600V 75A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for rugged power switching in medium-to-high power electronic circuits. Manufactured by Fuji Electric, this FGW75N60HD 600V  supports 600 V blocking voltage and 75 A collector current in a robust TO-247 through-hole package. With excellent thermal stability and low saturation voltage, it is ideal for industrial power control applications such as motor drives, power supplies, and renewable energy systems. Features: High voltage rating up to 600 V for demanding power applications. Supports up to 75 A collector current for robust current handling. Low collector–emitter saturation voltage for efficient conduction. High junction temperature tolerance (up to ~175 °C). Field-stop trench IGBT design for low switching losses and rugged performance. Standard TO-247 through-hole package for easy PCB implementation. Specifications: Part Number: FGW75N60HD IGBT 600V 75A Device Type: N-Channel IGBT Collector-Emitter Voltage (V_CE): 600 V Collector Current (I_C): 75-100 A Gate-Emitter Voltage (V_GE): ±20 V Saturated V_CE Voltage: ~1.5 – 1.95 V Power Dissipation: ~190 – 500 W Package Type: TO-247 Through-Hole Terminals: 3 (G, C, E) Applications: Industrial motor drives and control systems. Switch-mode power supplies (SMPS) and inverters. Renewable energy systems (e.g., solar inverters, wind power). Uninterruptible Power Supplies (UPS). Power factor correction (PFC) and power conversion circuits. Package Includes: 1 × FGW75N60HD – (75G60HD) 600V 75A IGBT Transistor (TO-247)